Diamond Cu-Msteed Technology

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Diamond Cu

Diamond Copper substrate is a composite of Cu and Diamond particle: • Super high TC: DCu >800 W/m-K • Low CTE: 6-9 ppm/K @ RT-200°C, • Stable quality: ideal material for high-power devices working in extreme environment. • Great cost efficient for high-power semiconductor packaging solutions in mass production.

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Product Description

Composite Material of Diamond Particles Sintered with Copper:

High Thermal Conductivity, Adjustable Coefficient of Thermal Expansion, Low Density, and High Thermal Shock Resistance.

Category	Material	CTE(ppm/K) @25℃-200℃	TC(W/(m·K)) @25℃	Density/cm³)
Diamond	DCu	6-7	＞800	6-7
Semiconductor	Si	3	151	2.3
	GaAs	5.9	46	5.32
	InP	4.5	70	4.79
	GaN	5.6	130	6.15
	SiC	3.1	490	3.2
Ceramic	Al₂O₃	6.7	17	3.6

Variety	Material	CTE(ppm/K) @25℃-200℃	TC(W/(m·K)) @25℃
DCu	DCP	6-7	800
DCu	DCP	7-10	700
CPC	CPC232	9-10	260
Semiconductor	Si	3	151
	GaAs	5.9	46
	InP	4.5	70
	GaN	5.6	130
	SiC	3.1	490
Ceramics	Al₂O₃	6.7	17

Performance Indicators		1st Generation （2018~2022）	2nd Generation （2023~NOW）
Material properties	Thermal Conductivity /W·m^-1·K^-1	>550（Bare sheet）	> 800（Bare sheet）*
	Thermal Performance Degradation after Thermal Shock (@-65/+150℃,500cyc)	20%	8.6%
	CTE /10^-6·K^-1	7.2 @RT-200℃	6~10 adjustable @RT~200℃ *
	Bending Strength * /MPa	~80	> 300
	Density /g·cm^-3	< 6	< 6
	Airtightness / Pa·m³·s^-1	10^-13	10^-13
	Electrical Conductivity / %IACS	32.4%（Surface Cu Cladding）*	21.3%（Bare sheet）*
Appearance Characteristics	Roughness /μm	<0.5（Surface Cu Cladding）*	< 1.5 （Bare sheet）*
	Flatness /mm	<0.02（Surface Cu Cladding）*	< 0.03（Bare sheet）*
	Thickness /mm	0.4~3±0.05	0.4~3 ±0.05 *
Coating Properties	Ni/Au	350℃×5min，Non-foaming	350℃×5min，Non-foaming

Application examples：

A. Substrate for RF PA

B. PCB embedding

In high-power RF and digital chip devices, DCu is embedded into FR4 or mixed-pressure substrates. The heat from power devices can be conducted more effectively to the PCB through DCu, and then dissipated through a heat sink.